![]() ![]() The Over and under temperature is also an important factor so do not store or operate this transistor below -55 Celsius and above +150 Celsius. To get long term performance from 2N5458 it is suggested to not drive load of more than 10mA, the load voltage should not be more than 25V, the drain to gate voltage should also be under 25V and reverse gate to source voltage must be under -25V and also it is good to always stay atleast 20% below from its maximum ratings. ![]() Low Level and Low Gain Signal Amplification On the other hand it can also be used as a switch and capable to drive max load of upto 10mA. The 2N5458 JFET can be used in verity of signal amplification purposes for example it can be used in audio preamplifiers, audio amplifier stages and amplification of any small and low gain signal in electronics. ![]() Other than that when used as a switch it will also perform well in wide variety of switching applications under 10mA current. The high input impedance feature and low noise capability also makes it ideal to use this device for amplification purposes where the input signal is very low. ![]() The drain and source of the transistor is swappable. The transistor also possess high gain and low noise feature which is very useful when amplifying a low gain signal and require high gain and low noise at the output. It is important to check pin configuration before replacing in your circuit.)ĢN5458 Transistor Explained / Description:ĢN5458 is a TO-92 packaged N Channel JFET that is designed for switching and amplification requirements in general purpose applications. Max Storage & Operating temperature Should Be: -55 to +150 CentigradeĢN5457, 2N5459, NTE312, 2N5638, 2N5640, 2SK162, 2SK518 (Pin configuration of these equivalent or substitute transistors may different from 2N5458.Maximum Power Dissipation can be achieved: 3 10mW.Minimum to Maximum Gate to Source Cutoff Voltage : – 0 to – 7.0.Maximum Reverse Gate to Source Voltage: – 25.Maximum Voltage From Drain to Source: 25V. ![]()
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